| Jg?gg _ MsE1PB, MsE1PD, MsE1PG, MsE1PJ7 WWw'V'Shay'C°m Vishay General Semiconductor 10 S: lnstantaneous FonNard Current (A) Junction Capacitance (pF) 0 0i0 0 4 0 0 1.2 i.6 2.0 2.4 Instantaneous Forward Voltage (\I) Reverse Voltage (V) Fig. 3 - Typical Instantaneous FonNard Characteristics Fig. 5 - Typical Junction Capacitance T00 T000 0 DJ i0 instantaneous Reverse Current (uA) Transient Thermal lmpedance (“C/W) Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Fig. A - Typical Reverse Leakage Characteristics Fig. 6 - Typical Transient Thermal Impedance PACKAGE ouTLINE DIMENSIONS in inches (millimeters) MicroSMP 0.059 (1.50) 0.030 (0.75) Cathode Band 0.043 (1 .i 0) 0.022 (0.55)F A 0.055 (i .40) _ 0.039 (0.98) _ _ 0.030 (0.75) 0.047 (i .20) 0.031 (0.78) 0.022 (0.55)i L T 0091 (2.30) 0.003 (2.10) 0.i06 (2.70)0-09‘ (2-30) Mounting Pad Layout0.079(2.00) [.%08fZ2) .1 0 029 (0 73) + 0025 (0-63) A 7 0332 - - (0.00) 4t F 0.011 (0.273 M 0.005 (002) 0.020 (0.50)Revision: 14?Aug-13 3 Document Number: 89067 For technical questions within your region: DiodesArnericas@vishay.c0m, DiodesAsia@vishay.com, Di desEurc e visha .com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.visria com/doc?91000 |